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IRF250
Data Sheet March 1999 File Number
1825.3
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA09295.
Features
* 30A, 200V * rDS(ON) = 0.085 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRF250 PACKAGE TO-204AE BRAND IRF250
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-204AE TOP VIEW
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
IRF250
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF250 200 200 30 19 120 20 150 1.2 910 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs tD(ON) tr tD(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured between the Contact Screw on Header that is Closer to Source and Gate Pins and Center of Die Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
Electrical Specifications
PARAMETER
TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS , ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = 20V VGS = 10V, ID = 16A (Figures 8, 9) VDS 50V, ID = 16V (Figure 12) VDD = 100V, ID 30A, RG = 6.2, RL = 3.2 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature
MIN 200 2.0 30 13 -
TYP 0.07 19 20 120 70 80 79 13 42 2000 800 300 5.0
MAX 4.0 25 250 100 0.085 30 180 100 120 120 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance
VGS = 10V, ID = 30A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature
-
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
Internal Source Inductance
LS
-
12.5
-
nH
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RJC RJA Free Air Operation
-
-
0.83 30
oC/W oC/W
2
IRF250
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 30 120
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 30A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 30A, dISD/dt = 100A/s TJ = 25oC, ISD = 30A, dISD/dt = 100A/s
140 1.8
350 4.7
2.0 630 8.1
V ns C
2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 1.5mH, RG = 25, peak IAS = 30A. See Figures 15 and 16.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
40
0.8 0.6 0.4 0.2 0
ID, DRAIN CURRENT (A)
32
24
16
8
0 0 50 100 150 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
1 ZJC, THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-2 PDM SINGLE PULSE t1 t2t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 0.1 1 10
10-3 10-5
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
IRF250 Typical Performance Curves
103
Unless Otherwise Specified
(Continued)
50 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 10ms 100ms ID , DRAIN CURRENT (A) VGS = 10V 40 VGS = 7V 80s PULSE TEST
ID, DRAIN CURRENT (A)
102
30
VGS = 6V
10
1ms 10ms
20
1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1.0
DC
10
VGS = 5V VGS = 4V 0 20 40 60 80 VDS , DRAIN TO SOURCE VOLTAGE (V) 100
10 102 VDS , DRAIN TO SOURCE VOLTAGE (V)
103
0
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
80s PULSE TEST 40
VGS = 10V VGS = 8V VGS = 7V
IDS(ON), DRAIN TO SOURCE CURRENT (A)
50
100
VDS 50V 80s PULSE TEST
ID, DRAIN CURRENT (A)
10
30 VGS = 6V 20
1
TJ = 150oC
TJ = 25oC
10
VGS = 5V VGS = 4V 0 1 2 3 4 VDS , DRAIN TO SOURCE VOLTAGE (V) 5
0
0.1 0
2 4 6 8 VSD , GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
0.5 80s PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE rDS(ON), DRAIN TO SOURCE 0.4 ON RESISTANCE ()
3.0 ID = 30A VGS = 10V 2.4
0.3 VGS = 10V
1.8
0.2
1.2
0.1
VGS = 20V
0.6
0 0 25 50 75 ID , DRAIN CURRENT (A) 100 125
0 -60
-40
-20
0
20
40
60
80
100 120 140 120
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
4
IRF250 Typical Performance Curves
1.25 ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.15 C, CAPACITANCE (pF) 6000
Unless Otherwise Specified
(Continued)
7500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1.05
4500 CISS 3000 COSS 1500 CRSS
0.95
0.85
0.75 -60
-40
-20 0 20 40 60 80 100 120 140 120 TJ, JUNCTION TEMPERATURE (oC)
0
1
2
5
10
2
5
102
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
25 gfs , TRANSCONDUCTANCE (S)
ISD , SOURCE TO DRAIN CURRENT (A)
VDS 50V 80s PULSE TEST
103 TJ = 25oC 5 2 102 5 2 10 5 2 1 0 0.5 1.0 1.5 2.0 VSD , SOURCE TO DRAIN VOLTAGE (V) 2.5 TJ = 25oC TJ = 150oC
20
15
TJ = 150oC
10
5
0
0
10
20 30 ID , DRAIN CURRENT (A)
40
50
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 30A 16
VDS = 40V VDS = 100V VDS = 160V
12
8
4
0 0 25 50 75 100 125 Qg(TOT) , TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
IRF250 Test Circuits and Waveforms
VDS tP IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG
+
BVDSS L VDS VDD
-
VDD
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr VDS RL 90%
tOFF td(OFF) tf 90%
+
RG DUT
-
VDD
0
10% 90%
10%
VGS 0 10%
50% PULSE WIDTH
50%
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY)
VDD Qg(TOT) VGS
12V BATTERY
0.2F
50k 0.3F
SAME TYPE AS DUT Qgs
Qgd
D G DUT 0
VDS
Ig(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR
Ig(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
6
IRF250
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7

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